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Karl-Suss MA6 double-sided mask aligner
Allows printing of structures on flat substrates by replication of a mask using photoresist exposure and development followed by etching, for example. Feature sizes below 1 micron may be replicated over wafers up to 100mm diameter. Double-sided aligning allows alignment of features on both sides of a silicon wafer
OPT Plasmalab 400 Sputtering Machine
Allows RF magnetron sputter deposition of dielectrics and metals in inert or reactive environments. 150mm diameter sputtering targets yield good uniformity over a 100mm wafer. Materials such as silica, germania-doped silica, alumina and tantalum pentoxide are routinely deposited. An additional Kurt Lesker Nano 3 sputterer is available for novel glass films.
Ionfab 300 Plus Reactive Ion Beam Deposit/Etcher
Allows ion-beam milling of materials to produce etched structures following photolithography, for example. May also be used for reactive or chemically-assisted ion-beam etching, and for ion-beam deposition of materials from a target.
OPT Plasmalab 80 Plus Reactive Ion Etcher
Parallel plate RF etcher for glass etching primarily using SF6 and CHF3. Can also be used for ashing using O2.
Edwards Auto 306 thermal evaporators
Two thermal evaporators are available for routine thin film deposition, particularly of metals such as aluminium, chromium, gold, silver, nichrome, neodymium and erbium but also indium tin oxide, fluoropolymers and magnesium fluoride, for example.
Edwards Auto 500 electron beam evaporator
Used for deposition of chromium, gold, aluminium, titanium, nickel, nichrome, silica, and cobalt.
Materials Research 2300°C Furnace
High temperature diffusion and annealing furnace, up to 2300°C in vacuum, argon or nitrogen, and up to 1700°C in oxygen. Maximum ramp rate is 50°C/min. The sample size can be up to 75mm diameter x 75mm high. Used primarily for diffusion in sapphire.
Severn (STS) 1200°C Tube Furnace
Diffusion and annealing up to 1200°C in argon, oxygen or nitrogen. Used for realising titanium-diffused waveguides in lithium niobate, for example.
Instron 600°C Ion-Exchange Furnaces
Fan-assisted high thermal stability environmental oven. Fully programmable control of ramp rates and dwells. Used for diffusion into glass from salt melts such as KNO3 for fabrication of optical devices, but also for routine annealing.
KLA Tencor P-16 Stylus Profiler
For 3D mapping of surface morphology of devices, for example to measure the depth of an etched structure or the thickness of a thin film. Brief specifications are vertical range of 300μm over a maximum horizontal scan length of 80mm with height resolution of about 1nm. 2μm diameter stylus tip with forces between 1 mg and 50 mg. Surface roughness, waviness and stress measurement.
Nikon LV100D Optical Microscope
For inspection of devices, with illumination from above and below, dark field and brightfield modes, polarisation and DIC Nomarski filters and computer interface for image collection, manipulation and feature size measurement.
Wet Benches for Chemical Processing
Used mainly for cleaning and etching a wide range of materials using acids such as hydrofluoric acid, fuming nitric acid, sulphuric acid, hydrochloric acid and acetic acid, mixtures such as “piranha” and etchants for gold, chromium, titanium, aluminium, silica and silicon (KOH).